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A 4H-SiC ICP-RIE Etch-Profile Simulation Framework Combining a Local Directional Etch-Rate Model with a Skinning Algorithm
编号：101 访问权限：仅限参会人 更新：2026-09-27 21:57:28 浏览：3次 口头报告

报告开始：暂无开始时间（Asia/Shanghai）

报告时间：暂无持续时间

所在会场：[暂无会议] [暂无会议段]

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摘要
Local etch rates in 4H-SiC ICP-RIE trenches depend jointly on species transport, geometric shadowing, and incidence direction. This paper presents an etch-profile simulation framework combining an equivalent local directional etch-rate model with a skinning algorithm. The rate model separates chemical and ion-assisted contributions, represented by an aspect-ratio-dependent attenuation function and an angular-response integral over the locally visible angular domain, respectively. Local slowness vectors connect the position- and direction-dependent rates to the skinning algorithm, with geometric quantities and rates updated as the profile evolves. Illustrative normalized calculations show that the chemical contribution decreases with increasing aspect ratio, while the ion-assisted contribution decreases as the visible angular domain narrows and becomes directionally asymmetric for an offset domain. The framework establishes a basis for subsequent profile simulation and parameter calibration.
关键词
4H-SiC; ICP-RIE; equivalent etch-rate model; profile evolution; skinning algorithm; ion shadowing
报告人
Yang Guang
学生 Xidian University

稿件作者
Yang Guang Xidian University
Ye Lingzhen Xidian University
Mingyue Zhao Xidian University
Zibo Xu Xidian University
Jing JI Xidian University
Meng ZHAO Xidian University
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重要日期

  • 会议日期

    11月06日

    2026

    至

    11月08日

    2026

  • 10月15日 2026

    初稿截稿日期

主办单位
IEEE Instrumentation and Measurement Society
承办单位
Sichuan University
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