Achieving p-channel operation in amorphous In-Ga-Zn-O (a-IGZO) requires effective acceptors, mobile holes, and efficient source/drain injection. This study evaluates the material and contact conditions under which Al/N co-implantation can support a simulated p-channel response in a 20 nm a-IGZO thin-film transistor (TFT). Published B and BF₂ implantation data constrained the shallow-donor response, with a root-mean-square error of 0.361 V across four threshold-voltage shifts. Stopping and Range of Ions in Matter (SRIM) calculations using 50,000 incident ions per species yielded a 99.13% overlap relative to the smaller retained dose. Depth-dependent Silvaco ATLAS calculations included separate donor and deep-trap terms and a fixed retained-damage fraction. At an effective pairing/activation fraction of 0.01, an acceptor level 0.20 eV above the valence-band edge primarily compensated electron conduction. Under ideal hole injection, reducing this energy to 0.05 eV produced negative-gate turn-on and a hole-dominated drain current of 1.17 × 10⁻⁶ A. Finite-barrier calculations placed the 10⁻¹² A current crossing near an effective hole barrier of 0.73 eV, while the modeled Au and NiO contacts remained injection limited. Acceptor ionization and source-contact injection therefore jointly govern the simulated p-channel window; spatial overlap alone does not ensure p-channel operation.

amorphous IGZO,ion implantation,p-channel thin-film transistor,TCAD simulation