Capacitive coupled plasma is widely used in semiconductor etching, but traditional structures have disadvantages such as low internal density and uneven distribution of plasma, as well as low processing efficiency and long processing cycles. In order to improve industrial manufacturing efficiency, this paper designs a magnetic field enhanced capacitive coupled plasma etching system. Based on the principle of magnetron sputtering, a rectangular magnet is coupled at the bottom of the lower plate, and the plasma is constrained by the magnetic field. The etching experiment was conducted using the system under different process parameters, and the experimental results showed that there was a certain combination of process parameters that significantly improved the etching efficiency. This verified that the etching system can effectively increase the plasma density inside the reaction chamber, further improving the production efficiency of semiconductor.

Capacitively Coupled Plasma; Magnetic Confinement; Etching Process; Semiconductor Devices