Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Shen Zhanwei Chinese Academy of Sciences,Institute of Semiconductors
Room2
公开 张贴报告
Characteristics of SiC MOSFET in a Wide Temperature Range
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhu Mengyu Xi'an Jiaotong University
Room1 /S1&S2
2021年08月27日 10:45~11:00
仅限参会人 口头报告
Impacts of Power Level on Parasitic Capacitance in Copper-Foiled Medium-Voltage Inductors
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhao Hongbo Aalborg University
Room1
仅限参会人 口头报告
Comparison Study of Parasitic Inductance, Capacitance and Thermal Resistance for Various SiC Packaging Structures
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhang Yifan Huazhong University of Science and Technology
Room1 /S3&S4
2021年08月27日 15:30~15:45
仅限参会人 口头报告
Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Shimbori Atsushi University of Texas at Austin
Room2
仅限参会人 口头报告
A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhaoliang Wen Harbin Institute of Technology
Room2 /S7&S8
2021年08月27日 14:30~14:45
仅限参会人 口头报告
Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Xu Hongyi Zhejiang University
Room2 /S7&S8
2021年08月27日 16:15~16:30
仅限参会人 口头报告
Comparing Hexagonal and Circular Cell Designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Liu Li Zhejiang University
Room2 /S5&S6
2021年08月27日 08:30~08:45
仅限参会人 口头报告
Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Qin Haihong Nanjing University of Aeronautics and Astronautics
Room2 /S5&S6
2021年08月27日 10:15~10:30
仅限参会人 口头报告
A Novel Low Parasitic Inductance SiC Power Module Based on Symmetrical Planar Packaging Structure and Integrating the Laminated Busbar
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Liu Yuanjian HeFei University of Technology
Room1
仅限参会人 口头报告
