Extended Abstract:The press pack module has been widely used in power systems for the characteristics of easy large-scale parallel grouping of power chips, short-circuit failure and double-sided heat dissipation. With the development of intelligent, safe and flexible power systems, Si IGBT devices cannot meet the stringent characteristics requirements of power semiconductor devices in power systems, due to the material limitations. the silicon carbide (SiC) devices,  as the third-generation semiconductors, which have the characteristics of higher voltage, larger capacity, higher efficiency and higher junction temperature have become the most potential power semiconductor devices in the power system^[1][2]. Combining the advantages of press pack and SiC devices to develop high-voltage and large-capacity press pack SiC modules will greatly promote the application of SiC devices process.
As a bipolar device, SiC IGBT devices will better take advantage of the high voltage of SiC materials, and the voltage of SiC IGBT devices currently reported have reached to be 27.5kV^[3]. In terms of SiC IGBT module packaging, North Carolina State University and Cree combined 15kV SiC IGBT and 10kV SiC JBS into modules through series and parallel packages, and tried to use the modules in medium-voltage three-phase converters^[4][5]. There are also attempts for press-pack SiC modules, Zhejiang University and the University of Arkansas analyzed challenges in the realization of press pack SiC MOSFET, and proposed a press pack packaging structure based on 1200V SiC MOSFET^[6][7]. When it comes to press pack of SiC IGBT, high voltage level requires a complete insulation coordination design, and the evolution of the characteristics of SiC devices under different pressures needs further study, to sum up that the press pack of SiC IGBT devices is facing great challenges.
In this paper, a solution to press pack module of 15kV SiC IGBT was proposed, and the cross-sectional view of the package structure is shown in Fig. 1. The external insulation of the package is designed with high Comparative Tracking Index (CTI) ceramic or resin composite material and umbrella group structure to meet the requirements for electrical clearance and creepage distance of high-voltage applications. Considering the area of the active area of SiC chips that can withstand pressure is much smaller, a high-precision and high-stability sub-unit frame is used for support and fixation, which helps to achieve the overall balanced pressure distribution. In order to verify the press pack solution, a 15kV SiC IGBT press-pack module was prepared, at the same time, a supporting test fixture was designed and  shown in Figure 2. The preliminary characteristics of the press pack SiC IGBT module was test and the results showed that press pack SiC IGBT module has a low leakage current of 24.7µA at 15kV.
 

15kV SiC IGBT, press pack, Insulation coordination