When using traditional driver circuits, enhanced gallium nitride power devices (eGaN HEMTs) suffer from serious crosstalk problems in a phase-leg topology. An improved active Miller clamp driver circuit is proposed. First, the crosstalk mechanism is analyzed, and the influence of various factors on crosstalk were evaluated experimentally. Then, the operating principle of the improved active Miller clamp driver circuit is discussed, and the optimized parameter design method is given. Finally, the effect of the improved active Miller clamp method to suppress crosstalk is verified on a double pulse test platform.
 

eGaN HEMT,crosstalk suppression,gate driver,high-speed switching