In this work, the JBS integrated MOSFETs with two kinds of integration, i.e., JBS cell integrated in source region (named Split-Source MOSFET) and JBS cell integrated in gate region (named Split-Gate MOSFET) are investigated and the most important reliability aspect, i.e., short circuit robustness is compared via experiment and simulation. The device failure mechanisms are studied and the method of improving short circuit ruggedness of the JBS integrated MOSFET is proposed.
 

SiC MOSFET,Integrated JBS,Short circuit