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A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter
编号：106 访问权限：仅限参会人 更新：2021-07-21 20:06:13 浏览：594次 口头报告

报告开始：2021年08月27日 14:30（Asia/Shanghai）

报告时间：15min

所在会场：[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling

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摘要
Abstract—Data centers demand high-current, high-efficiency and low-cost power solutions. And the high frequency resonant converter is more attractive in industrial application because of its high power density and high efficiency. This paper presents a modular and linear extendable single-stage DCX with high voltage conversion ratio which based on high frequency LLC resonant converter. The converter using a planar matrix transformer has successfully achieved ZVS in the primary side as well as ZCS in the secondary side. Meanwhile, GaN devices are also applied due to their much lower parasitic capacitance compared to that of high voltage Si MOSFET. A 500 kHz, 400-6 V, 600 W isolated prototype with high conversion ratio has been built and tested as well, which achieved 91.1% peak efficiency.
 
关键词
Isolated modular converter,High frequency,LLC resonant converter,Planar matrix transformer,GaN devices
报告人
Wen Zhaoliang
student Harbin Institute of Technology

稿件作者
Guan Yueshi Harbin Institue of Technology
Wen Zhaoliang Harbin Institute of Technology
Yijie Wang Harbin Institute of Technology
Dianguo Xu Harbin Institute of Technology
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重要日期

  • 会议日期

    08月25日

    2021

    至

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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