The p-type islands embedded into the drift layer were found effective in shielding the contacts and reducing the leakage current even at high temperature. Two types of SBD-integrated trench gate MOSFETs with p-type buried-layer (BLSI-MOS), are proposed by numerical simulation using SENTAURUS TCAD. Even though the BLSI-MOS has embedded SBD, the active area of MOSFET is not consumed due to the effect of buried grid. Thus, they demonstrate the advantage of specific on-resistance (R_on,sp) reduction over the developed double-trench MOSFET without SBD. However, the position of the buried-layer (BL) with respect to the contacts has an influence on the electrical properties of MOSFET and SBD. Meanwhile, the BL is short to source contacts or floating so as to justify the connection's effects on the dynamic characteristics. These results will provide guidance for design and modeling of 4H-SiC SBD-integrated trench MOSFET.
 

Silicon Carbide,trench MOSFET,schottky barrier diode,electric field,short-circuit,high temperature