Silicon carbide (SiC) has received increasing attention as a significant semiconductor material for ultrahigh-voltage and low-loss power devices owing to its superior physical properties.The bipolar devices require a long carrier lifetime to achieve sufficient conductivity modulation in the forward conduction mode. In this study, treatments of 1300 ℃ thermal oxidation and hydrogen annealing were applied on 4H-SiC epitaxial wafer to modulate the minority carrier lifetime, which was investigated by microwave photoconductive decay (μ-PCD).

4H-SiC，,minority carrier lifetimes,power devices