Interconnections on the chip topside are now limiting the lifetime of power modules. It is necessary to replace the bond wire material from Al to Cu with the help of bond buffer technologies in order to fulfill the requirements of wide bandgap power devices under high temperature operation conditions. The reliability performances of different bond buffer technologies are reviewed. The Cu wire bonding shows a robust power cycling capability. The weak point of the packaging has been changed from the bond wire to the substrate or the sinter layer.

power cycling,bond buffer,reliability,packaging