The SiC/Si hybrid switch composed of high current IGBT and low current MOSFET can provide higher cost performance. However, the dynamic current overshoot exceeding the safe operating area of SiC MOSFET is the major barrier toward reliable operation of the hybrid switch. In addition, it remains an unsolved issue that how to design gate resistances for a Si/SiC hybrid switch. This paper investigates the influence of gate resistances on the turn-on behavior of Si/SiC hybrid switch in a double pulse test. Proper gate resistances are extracted and implemented to reach the tradeoff between switching loss and device reliability without resorting to active regulation.

Si/SiC hybrid switch,gate resistances,safe operating area,current overshoot,turn-on behavior