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The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET
编号：75 访问权限：仅限参会人 更新：2021-07-21 20:05:54 浏览：716次 口头报告

报告开始：2021年08月27日 16:45（Asia/Shanghai）

报告时间：15min

所在会场：[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling

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摘要
Abstract—The conduction characteristics of the third quadrant of SiC MOSFET are mainly the current sharing between the MOS channel and the body diode which can be affected by many factors. This paper presents a comprehensive study of the influence of dynamic threshold voltage drift on third quadrant characteristics of SiC MOSFET. By combining the equivalent potential model, TCAD simulation, and experiment, it is revealed that once the threshold drifts by dynamic gate voltage stress, the static and dynamic characteristics of third quadrant of SiC MOSFET will change. Furthermore, the current sharing of parallel devices is also affected by dynamic threshold voltage drift. These results provide an effective guide for the third quadrant application of SiC MOSFET.
关键词
Body diode,SiC MOSFET,Third quadrant characteristics,Dynamic threshold voltage drift
报告人
Lei Tang
Chongqing university

稿件作者
Lei Tang Chongqing university
Huaping Jiang Chongqing university
Hua Mao Chongqing university
Zebing Wu Chongqing university
Xiaohan Zhong Chongqing university
Xiaowei Qi Chongqing university
RAN LI Chongqing university
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重要日期

  • 会议日期

    08月25日

    2021

    至

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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