A 650V/120A rated half-bridge chip-on-chip GaN module has been proposed in this paper. The chip-on-chip structure allows to distribute decoupling capacitors close to each device, which can equalize the dynamic turn-on current of parallel devices and reduce the drain-source voltage overshoot. The effect of parasitic inductance on parallel devices is analyzed and optimized. By double-sided cooling, the module shows good thermal performance.
 

GaN,modular