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Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions
编号：86 访问权限：仅限参会人 更新：2021-07-21 20:06:01 浏览：728次 口头报告

报告开始：2021年08月27日 10:30（Asia/Shanghai）

报告时间：15min

所在会场：[Room1] Oral Session 1 [S1&S2] WBG Device Modeling, Simulation and Reliability

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摘要
Power electronic systems based on Gallium Nitride (GaN) devices are expected to significantly reduce the power losses and increase the power density. This makes GaN power devices very promising for next-generation power electronics, like the applications in electric vehicles, 5G communication, lasers, and renewable energy. However, reliability issues are still an obstacle to the widespread application of p-GaN high electron mobility transistor (HEMT). It is of great significance to study the reliability of p-GaN HEMT to withstand unclamped inductive switching (UIS) shock. This work explains its unique failure mechanism through UIS testing of commercial 200V p-GaN HEMT. During the entire UIS process, the p-GaN HEMT do not consume the energy stored by the load inductance, and the energy transferred from the load inductance makes the electric field of the dielectric under the source field plate (SFP) of the device rise rapidly. This high peak electric field causes the catastrophic breakdown of the passivation layer. The UIS withstanding capability of p-GaN HEMT is inherent to the weakness of its structure. Without p-n junction to support high drain voltage, the GaN HEMTs do not have avalanche capability. Once the drain-source voltage VDS exceeds the critical peak voltage Vpeak, failure occurs. Our investigation provides a comprehensive criterion for the reliability evaluation of p-GaN HEMT.
关键词
200V p-GaN HEMT; UIS; failure mechanism; SFP
报告人
Xuan Li
University of Electronic Science and Technology of China

稿件作者
Junjie Ye University of Electronic Science and Technology of China
Xuan Li University of Electronic Science and Technology of China
Xiaochuan Deng University of Electronic Science and Techonology of China
Bo Zhang University of Electronic Science and Technology of China
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重要日期

  • 会议日期

    08月25日

    2021

    至

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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