This work investigates the single pulse short-circuit failure mechanism of 1200V asymmetric Trench SiC MOSFETs. With the help of the test system, the DUT (IMW120R220M1H) is stressed by SC stress with gradually increased pulse width, until it fails. The electrical properties before and after the failure are compared. Moreover, TACD simulations are performed to evaluate the physical status of the device under SC condition. It demonstrates that the serious stress, mainly the impact ionization rate, appealing at the channel region, leads to the gate-source failure of the device.

Short-Circuit,Asymmetric Trench,SiC MOSFETs,Failure Mechanism