The mechanism of the crosstalk for SiC MOSFETs in the phase-leg circuit configuration is analyzed in detail. The state-of-the-art modeling and suppression methods of the crosstalk in the switching transient for the SiC MOSFETs are summarized. Based on the parameters extracted from FEA modeling by ANSYS Q3D and double-pulse switching test results, the phase-leg circuit model is established by SABER to analyze the influence of each parameter i.e. parasitic inductances, parasitic capacitances, body diode and gate resistance. The existing crosstalk suppression methods are divided respectively from two perspectives. Based on active/passive suppression methods, the advantages and disadvantages in terms of the complexity and cost are discussed. Based on gate voltage/impedance regulation methods (GVC/GIR), the suppression principle, effect and influence on switching speed are analyzed. Furthermore, the future research directions of the crosstalk for SiC MOSFETs are summarized, including exploring the effect of electromagnetic interference (EMI) and junction temperature variation, the influence of the common source inductance in different application scenarios, as well as the crosstalk suppression due to the asymmetry of parasitic parameters of paralleled SiC MOSFETs. The effect of parasitic parameters, device package and circuit structure should be considered comprehensively to suppress the crosstalk voltage.