Soft Precharging Method for Four-Level Hybrid-Clamped Converter
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhao Yihui Chongqing university
P /P5
2021年08月27日 12:40~12:45
公开 张贴报告
Short-circuit Protection Circuit of SiC MOSFET Based on Drain-source Voltage Integral
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Qiu Zhidong Beijing Jiaotong University
P /P4
2021年08月27日 12:30~12:35
公开 张贴报告
Design and Research on Package Insulation of Highvoltage Silicon Carbide Module
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhou Yang Global Energy Interconnection Research Institute Co.,Ltd
P /P2
2021年08月27日 12:05~12:10
公开 张贴报告
Low Roughness SiC Trench Formed by ICP Etching with Sacrificial Oxidation and Ar Annealing Treatment
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zheng Changwei Zhuzhou CRRC Times Semiconductor Co. Ltd.
P /P1
2021年08月27日 12:05~12:10
公开 张贴报告
Research on threshold voltage hysteresis of D-mode and fully recessed E-mode AlGaN/GaN MIS-HEMTs with HfO2 dielectric
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Yu Zicheng Shanghai University
P /P1
2021年08月27日 12:45~12:50
公开 张贴报告
Electrical Insulation Packaging for High Voltage High Power IGBT Modules using Nonlinear Conductivity Composites
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Li Kaixuan XJTU
P /P2
2021年08月27日 12:00~12:05
公开 张贴报告
Active Magnetic Bearing Amplifier Design based on SiC Devices
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Cao Gang Huazhong University of Science and Technology
P /P5
2021年08月27日 12:45~12:50
公开 张贴报告
Influence of the Interface Traps Distribution on I-V and C-V Characteristics of SiC MOSFET Evaluated by TCAD Simulations
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
cai yumeng North China Electric Power University
P /P1
2021年08月27日 12:40~12:45
公开 张贴报告
Design of a High Power Density Bidirectional AC/DC Converter Based on GaN
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Guan Jiajia Huazhong University of Science and Technology
P /P5
2021年08月27日 12:00~12:05
公开 张贴报告
High Breakdown Voltage AlGaNGaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Deng Siyu University of Electronic Science and Technology of China
P /P1
2021年08月27日 12:00~12:05
公开 张贴报告
