The Influence of Gate Resistances on the Turn-on Behaviors of Si/SiC Hybrid Switch
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Jiang Xiaofeng Chongqing university
P /P3
2021年08月27日 12:20~12:25
公开 张贴报告
An Optimal Design Scheme of Intermediate Bus Voltage for two-stage LLC Resonant Converter Based on SiC MOSFET
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
wang feng Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology
P /P2
2021年08月27日 12:50~12:55
公开 张贴报告
An Improved Desaturation Protection Method with Self-Adaptive Blanking-Time for Silicon Carbide (SiC) Power MOSFETs
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Li Jiawei Huazhong University of Science and Technology
P /P4
2021年08月27日 12:05~12:10
公开 张贴报告
A Compact 175℃ High Temperature Gate Driver with Isolated Power Supply and Advanced Protection for HybridPACK Drive SiC Power Module
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Qian Cheng Huazhong University of Science and Technology
P /P2
2021年08月27日 12:45~12:50
公开 张贴报告
650V 4H-SiC VDMOS with Additional N Region_A Simulation Study
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Gao Xiuxiu CORESING SEMICONDUCTOR TECHNOLOGY CO . LTD
P /P1
2021年08月27日 12:20~12:25
公开 张贴报告
Datasheet Driven Turn Off Overvoltage Prediction for Silicon Carbide Power MOSFETs Based on Theoretical Analysis
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Qian Cheng Huazhong University of Science and Technology
Room1 /S1&S2
2021年08月27日 08:30~08:45
仅限参会人 口头报告
